Elektroderada graphene ee aadka u hufan oo la fidin karo

Alaabada laba-geesoodka ah, sida graphene, waxay soo jiidanayaan labadaba codsiyada semiconductor-ka caadiga ah iyo codsiyada cusub ee elektarooniga dabacsan. Si kastaba ha ahaatee, xoogga sare ee graphene wuxuu keenaa jabitaan cadaadis hooseeya, taasoo ka dhigaysa mid adag in laga faa'iidaysto sifooyinka elektaroonigga ah ee aan caadiga ahayn ee elektaroonigga la fidin karo. Si loo suurtogeliyo waxqabadka aadka u wanaagsan ee ku tiirsanaanta cadaadiska ee gudbiyaasha graphene ee hufan, waxaan abuurnay nanoscrolls graphene inta u dhaxaysa lakabyada graphene ee la dul saaray, oo loo yaqaan graphene/graphene scrolls (MGGs). Iyada oo hoos u socota cadaadiska, qaar ka mid ah duubabka ayaa isku xiray qaybaha kala qaybsan ee graphene si ay u ilaaliyaan shabakad wareegta oo awood u siisay gudbin heer sare ah noocyada sare. MGG-yada saddex-geesoodka ah ee lagu taageeray elastomers waxay haysteen 65% gudbintooda asalka ah 100% cadaadis, taas oo si toos ah ugu toosan jihada socodka hadda jira, halka filimada saddex-geesoodka ah ee graphene ee aan lahayn nanoscrolls ay haysteen oo keliya 25% gudbintooda bilowga ah. Transistor-ka kaarboonka oo dhan la fidin karo oo lagu sameeyay MGGs oo ah elektroodhyo ayaa muujiyay gudbinta >90% wuxuuna hayay 60% wax soo saarkiisii ​​​​hore ee hadda oo ah 120% cadaadis (oo la mid ah jihada gaadiidka dallacaadda). Transistor-yadan oo aad loo fidin karo oo hufan oo kaarboonka oo dhan ah ayaa awood u siin kara optoelectronics-ka casriga ah ee la fidin karo.
Elektarooniga hufan ee la fidin karo waa goob sii kordheysa oo leh codsiyo muhiim ah nidaamyada biointegrated ee horumarsan (1, 2) iyo sidoo kale awoodda lagu dhex dari karo optoelectronics-ka la fidin karo (3, 4) si loo soo saaro robotics-ka jilicsan ee casriga ah iyo bandhigyada. Graphene waxay muujisaa sifooyin aad loo jecel yahay oo ah dhumucda atomiga, hufnaanta sare, iyo hufnaanta sare, laakiin hirgelinteeda codsiyada la fidin karo waxaa joojiyay u janjeera inay dillaacdo noocyada yaryar. Ka gudubka xaddidaadaha farsamada ee graphene waxay awood u siin kartaa shaqo cusub oo ku jirta aaladaha hufan ee la fidin karo.
Sifooyinka gaarka ah ee graphene waxay ka dhigayaan musharax adag oo loogu talagalay jiilka xiga ee elektroodhada hufan ee gudbiya (5, 6). Marka la barbardhigo gudbiyaha hufan ee ugu badan ee la isticmaalo, indium tin oxide [ITO; 100 ohms/sq (sq) oo leh 90% hufnaan], graphene monolayer ah oo lagu beero kaydka uumiga kiimikada (CVD) wuxuu leeyahay isku-darka isku midka ah ee iska caabbinta xaashida (125 ohms/sq) iyo hufnaan (97.4%) (5). Intaa waxaa dheer, filimada graphene waxay leeyihiin dabacsanaan aan caadi ahayn marka loo eego ITO (7). Tusaale ahaan, substrate balaastig ah, hufnaanteeda waa la hayn karaa xitaa radius qaloocsan oo yar sida 0.8 mm (8). Si loo sii wanaajiyo waxqabadkeeda korantada oo ah gudbiye dabacsan oo hufan, shaqooyinkii hore waxay sameeyeen walxo isku-dhafan oo graphene ah oo leh nano-nano-lacag ah oo hal-cabbir ah (1D) ama nanotubes kaarboon (CNTs) (9-11). Intaa waxaa dheer, graphene waxaa loo isticmaalay elektroodh ahaan semiconductors-ka heterostructural-ka ee isku dhafan (sida 2D bulk Si, 1D nanowires/nanotubes, iyo 0D quantum dhibcood) (12), transistors dabacsan, unugyada qorraxda, iyo diode-yada iftiinka soo saara (LEDs) (13-23).
In kasta oo graphene ay muujisay natiijooyin rajo leh oo ku saabsan elektarooniga dabacsan, haddana codsigeeda qalabka elektarooniga ah ee la fidin karo waxaa xaddiday sifooyinkeeda farsamada (17, 24, 25); graphene wuxuu leeyahay adkaansho gudaha ah oo ah 340 N/m iyo modules Young oo ah 0.5 TPa (26). Shabakadda xooggan ee kaarboon-kaarboon ma bixiso wax farsamooyin kala firdhis tamar ah oo loogu talagalay cadaadiska la dabaqay sidaas darteedna si fudud ayuu u dillaacaa wax ka yar 5% cadaadis. Tusaale ahaan, CVD graphene oo loo wareejiyay substrate-ka laastikada ah ee polydimethylsiloxane (PDMS) waxay ilaalin kartaa oo keliya socodka iyada oo ka yar 6% cadaadis (8). Xisaabinta aragtiyeed waxay muujinaysaa in isku-dhafka iyo isdhexgalka u dhexeeya lakabyada kala duwan ay si xooggan u yareyn karto adkaanta (26). Iyadoo la isku darayo graphene lakabyo badan, waxaa la soo sheegay in graphene-kan laba-ama saddex-lakab ah uu la fidin karo 30% cadaadis, isagoo muujinaya isbeddelka iska caabbinta 13 jeer ka yar kan monolayer graphene (27). Si kastaba ha ahaatee, fiditaanku wali si weyn ayuu uga hooseeyaa kuwa casriga ah ee sameeya fiditaanka c (28, 29).
Transistors-ku waa muhiim codsiyada la fidin karo sababtoo ah waxay awood u siinayaan akhrinta dareemayaasha casriga ah iyo falanqaynta calaamadaha (30, 31). Transistors-ka ku jira PDMS oo leh graphene lakab badan sida elektroodhada isha/daadinta iyo walxaha kanaalka ayaa ilaalin kara shaqada korantada ilaa 5% cadaadis (32), taas oo si weyn uga hooseysa qiimaha ugu yar ee loo baahan yahay (~50%) dareemayaasha la socon kara caafimaadka iyo maqaarka elektaroonigga ah (33, 34). Dhawaan, habka graphene kirigami ayaa la sahamiyay, transistor-ka oo ay ku xiran tahay elektiroonigga dareeraha ah waxaa la fidin karaa ilaa 240% (35). Si kastaba ha ahaatee, habkani wuxuu u baahan yahay graphene oo la hakiyey, taas oo adkeyneysa habka wax soo saarka.
Halkan, waxaan ku gaarnaa aaladaha graphene ee aadka u fidsan annagoo isku dhejinayna duubab graphene ah (dhererkoodu yahay ~ 1 ilaa 20 μm, ballaciisu yahay ~ 0.1 ilaa 1 μm, iyo dhererkiisu yahay ~ 10 ilaa 100 nm) inta u dhaxaysa lakabyada graphene. Waxaan qiyaaseynaa in duubabyadan graphene ay bixin karaan waddooyin gudbiya oo lagu xiro dildilaaca ku jira xaashida graphene, sidaas darteedna ay ilaalinayaan conductivity sare marka la eego cadaadiska. Duubabka graphene uma baahna isku-darka ama hab-socod dheeraad ah; si dabiici ah ayaa loo sameeyaa inta lagu jiro habka wareejinta qoyan. Annagoo adeegsanayna electrodes-ka G/G (graphene/graphene) ee lakabka badan leh (MGGs) ee la fidsan karo ee graphene (isha/daadinta iyo albaabka) iyo CNT-yada semiconductor-ka ah, waxaan awoodnay inaan muujinno transistors-ka oo dhan ee kaarboonka ah oo aad u hufan oo aad u fidsan, kuwaas oo loo fidin karo 120% cadaadis (oo la mid ah jihada gaadiidka dallacaadda) oo haysan kara 60% wax soo saarkooda hadda ee asalka ah. Kani waa transistor-ka ku salaysan kaarboonka ee ugu hufan ee la fidsan karo ilaa hadda, wuxuuna bixiyaa hadda ku filan si loo wado LED aan dabiici ahayn.
Si loo suurtogeliyo elektroodhada graphene ee baaxadda weyn leh ee la fidin karo, waxaan doorannay graphene-ka CVD ee ku yaal xaashida Cu. Xaashida Cu waxaa lagu laalay bartamaha tuubada quartz-ka CVD si loogu oggolaado koritaanka graphene labada dhinac, iyadoo la samaynayo qaab-dhismeedka G/Cu/G. Si loo wareejiyo graphene, marka hore waxaan ku dahaarannay lakab khafiif ah oo poly(methyl methacrylate) (PMMA) si loo ilaaliyo hal dhinac oo graphene ah, kaas oo aan ugu magac darnay graphene-ka sare (kala duwanaanshaha dhinaca kale ee graphene), ka dibna, filimka oo dhan (PMMA/graphene-ka sare/Cu/graphene-ka hoose) ayaa lagu qooyay xalka (NH4)2S2O8 si looga saaro xaashida Cu. Graphene-ka dhinaca hoose ee aan lahayn dahaarka PMMA wuxuu si aan laga fursan karin u yeelan doonaa dildilaacyo iyo cillado u oggolaanaya in birtu dhex gasho (36, 37). Sida lagu muujiyey Jaantuska 1A, iyadoo la raacayo saameynta xiisadda dusha sare, qaybaha graphene ee la sii daayay ayaa loo duubay duubab ka dibna lagu dhejiyay filimka sare-G/PMMA ee haray. Duubabka sare ee G/G waxaa loo wareejin karaa substrate kasta, sida SiO2/Si, galaas, ama polymer jilicsan. Ku celcelinta habkan wareejinta dhowr jeer isla substrate-ka waxay siinaysaa qaab-dhismeedka MGG.
(A) Sawirka jaantuska ah ee habka wax soo saarka ee MGGs oo ah elektroodh la fidin karo. Intii lagu jiray wareejinta graphene, graphene-ka dambe ee ku yaal xaashida Cu ayaa la jebiyey xuduudaha iyo cilladaha, waxaana loo duubay qaabab aan kala sooc lahayn, waxaana si adag loogu dhejiyay filimada sare, taasoo sameysanaysa nanoscrolls. Kartoonka afraad wuxuu muujinayaa qaab-dhismeedka MGG ee la isku dhejiyay. (B iyo C) Astaamaha TEM ee xallinta sare leh ee MGG monolayer ah, oo diiradda saaraya graphene monolayer ah (B) iyo gobolka scroll (C), siday u kala horreeyaan. Qaybta hoose ee (B) waa sawir weyneyn hooseeya oo muujinaya qaab-dhismeedka guud ee MGG-yada monolayer ee ku yaal shabagga TEM. Qaybaha hoose ee (C) waa astaamaha xoojinta ee laga qaaday sanduuqyada leydiga ah ee lagu tilmaamay sawirka, halkaas oo masaafada u dhaxaysa diyaaradaha atomku ay yihiin 0.34 iyo 0.41 nm. (D) Kaarboon K-geeska EEL oo leh meelaha ugu sarreeya ee garaafikada π* iyo σ* ee lagu calaamadeeyay. (E) Sawirka qaybta ah ee AFM ee duubista G/G ee monolayer-ka leh muuqaal dherer ah oo ku yaal xariiqda dhibcaha jaalaha ah. (F ilaa I) Mikroskoobka indhaha iyo sawirka AFM ee saddex-lakab G oo aan lahayn (F iyo H) iyo duubab (G iyo I) oo ku yaal substrate-ka SiO2/Si ee 300-nm-qaro ah, siday u kala horreeyaan. Duubabka iyo laalaabyada matalaya ayaa la calaamadeeyay si loo muujiyo kala duwanaanshohooda.
Si loo xaqiijiyo in duubabku ay yihiin graphene la duubay, waxaan sameynay daraasado muujinaya in graphene-ka gudbinta ee xallinta sare leh (TEM) iyo luminta tamarta elektarooniga (EEL) ay ku sameeyeen qaab-dhismeedka G/G ee dusha sare ee monolayer-ka. Jaantuska 1B wuxuu muujinayaa qaab-dhismeedka lix-geesoodka ah ee graphene-ka hal-lakabka ah, qaybta hoosena waa qaab-dhismeedka guud ee filimka lagu daboolay hal god oo kaarboon ah oo shabakadda TEM ah. Graphene-ka hal-lakabka ah wuxuu ku fidsan yahay inta badan shabakadda, qaar ka mid ah jajabyada graphene-kana waxay ka muuqdaan iyagoo ay joogaan tiro badan oo giraangiraha lix-lakabka ah ayaa soo muuqda (Jaantuska 1B). Adigoo ku wareegaya duub gaar ah (Jaantuska 1C), waxaan aragnay xaddi badan oo jajabyada shaadhka graphene ah, iyadoo farqiga shaadhka uu u dhexeeyo 0.34 ilaa 0.41 nm. Cabbiraadahani waxay soo jeedinayaan in jajabyada si aan kala sooc lahayn loo duubay oo aysan ahayn graphite qumman, kaas oo leh kala fogaansho shaadhka ah oo ah 0.34 nm oo ku jira lakabka "ABAB". Jaantuska 1D wuxuu muujinayaa spectrum-ka kaarboon K-geeska EEL, halkaas oo meesha ugu sarreysa ee 285 eV ay ka soo jeedo orbital-ka π* kan kalena uu ku dhow yahay 290 eV ay sabab u tahay kala-guurka orbital-ka σ*. Waxaa la arki karaa in isku-xidhka sp2 uu ku badan yahay qaab-dhismeedkan, isagoo xaqiijinaya in duubabku ay yihiin kuwo aad u garaaf ahaan ah.
Sawirrada mikroskoobka indhaha iyo mikroskoobka xoogga atomiga (AFM) waxay bixiyaan aragti ku saabsan qaybinta nanoscrolls-ka graphene ee MGG-yada (Sawirka 1, E ilaa G, iyo Jaantusyada S1 iyo S2). Duubabka si aan kala sooc lahayn ayaa loogu qaybiyaa dusha sare, cufnaantooda gudaha-diyaaradda ahina waxay si siman ugu kordheysaa tirada lakabyada la dul saaray. Duubabka badan ayaa isku dheggan guntimo waxayna muujiyaan dherer aan isku mid ahayn oo u dhexeeya 10 ilaa 100 nm. Waxay yihiin 1 ilaa 20 μm dherer ahaan iyo 0.1 ilaa 1 μm ballac ahaan, iyadoo ku xiran cabbirka jajabyada graphene-kooda bilowga ah. Sida lagu muujiyey Jaantuska 1 (H iyo I), duubabku waxay leeyihiin cabbirro aad uga weyn laalaabyada, taasoo horseedaysa is-dhexgal aad u qallafsan oo u dhexeeya lakabyada graphene.
Si loo cabbiro sifooyinka korontada, waxaan qaabeynay filimada graphene oo leh ama aan lahayn qaab-dhismeedyo duuban iyo lakabyo isku-dhafan oo ah 300-μm-ballaaran iyo 2000-μm-dheer iyadoo la adeegsanayo sawir-qaadis. Iska caabinta laba-baaritaan ahaan shaqo ahaan cadaadis ayaa lagu cabbiray xaaladaha deegaanka. Joogitaanka duubabku waxay hoos u dhigtay iska caabinta graphene-ka monolayer 80% iyadoo hoos u dhac 2.2% ah oo ku yimid gudbinta (Jaantuska S4). Tani waxay xaqiijineysaa in nanoscrolls, oo leh cufnaan hadda sare ilaa 5 × 107 A/cm2 (38, 39), ay si aad ah ugu lug leeyihiin MGG-yada. Dhammaan graphene-ka caadiga ah ee mono-, bi-, iyo trilayer, MGG-ga saddex-layer wuxuu leeyahay gudbinta ugu fiican oo leh hufnaan ku dhawaad ​​90%. Si aan u barbar dhigno ilo kale oo graphene ah oo lagu soo warramey suugaanta, waxaan sidoo kale cabbirnay iska caabinta xaashida afar-baaritaan (Jaantuska S5) waxaanan ku taxnay shaqo gudbinta 550 nm (Jaantuska S6) Jaantuska 2A. MGG wuxuu muujinayaa isku-dubarid iyo hufnaan la barbar dhigi karo ama ka sarreeya graphene caadi ah oo si macmal ah loo dhejiyay iyo oksaydhka graphene ee la dhimay (RGO) (6, 8, 18). Xusuusnow in iska caabinta xaashida ee graphene caadi ah oo lakab badan leh oo macmal ah oo ka yimid suugaanta ay wax yar ka sarreeyaan kan MGG-geenna, malaha sababtoo ah xaaladaha koritaanka aan la hagaajin iyo habka wareejinta.
(A) Iska caabinta xaashida afar-baaritaan iyo gudbinta 550 nm noocyo badan oo graphene ah, halkaas oo afargeesle madow ay tilmaamayaan mono-, bi-, iyo saddexgeesle MGGs; goobo cas iyo saddexgeesle buluug ah waxay la mid yihiin graphene caadi ah oo badan oo lagu beeray Cu iyo Ni laga soo qaatay daraasadaha Li et al. (6) iyo Kim et al. (8), siday u kala horreeyaan, ka dibna loo wareejiyay SiO2/Si ama quartz; saddexagal cagaaranna waa qiimayaal RGO ah oo leh darajooyin kala duwan oo hoos u dhac ah laga soo bilaabo daraasadda Bonaccorso et al. (18). (B iyo C) Isbeddelka iska caabinta caadiga ah ee MGG-yada mono-, bi- iyo saddexgeesle iyo G oo ah shaqo isku mid ah (B) iyo isku mid ah (C) jihada socodka hadda socda. (D) Isbeddelka iska caabinta caadiga ah ee labageesle G (cas) iyo MGG (madow) oo hoos yimaada cadaadiska wareegga ah ee rarida ilaa 50% cadaadiska toosan. (E) Isbeddelka iska caabinta caadiga ah ee saddexgeesle G (cas) iyo MGG (madow) oo hoos yimaada cadaadiska wareegga ah ee rarida ilaa 90% cadaadiska barbar socda. (F) Isbeddelka awoodda caadiga ah ee mono-, bi- iyo trilayer G iyo bi- iyo trilayer MGGs oo ah shaqo n ah oo cadaadis ah. Qaybta hoose waa qaab-dhismeedka capacitor-ka, halkaas oo substrate-ka polymer-ku uu yahay SEBS iyo lakabka dielectric-ka polymer-ku waa SEBS 2-μm dhumucdiisuna tahay.
Si loo qiimeeyo waxqabadka ku tiirsan cadaadiska ee MGG, waxaan graphene u wareejinay substrates-ka thermoplastic elastomer styrene-ethylene-butadiene-styrene (SEBS) (~ 2 cm ballac iyo ~ 5 cm dherer), waxaana la cabbiray socodka iyadoo substrate-ka la fidiyay (fiiri Qalabka iyo Hababka) labadaba toosan iyo barbar socda jihada socodka hadda (Jaantuska 2, B iyo C). Dhaqanka korontada ee ku tiirsan cadaadiska ayaa soo hagaagay iyadoo la isku daray nanoscrolls iyo tirada sii kordheysa ee lakabyada graphene. Tusaale ahaan, marka cadaadisku uu ku toosan yahay socodka hadda, graphene-ka monolayer, ku darista duubabku waxay kordhisay cadaadiska marka koronto jabto laga bilaabo 5 ilaa 70%. Dulqaadka cadaadiska ee graphene-ka trilayer sidoo kale si weyn ayaa loo hagaajiyay marka la barbar dhigo graphene-ka monolayer. Iyada oo la adeegsanayo nanoscrolls, 100% cadaadis toosan, iska caabbinta qaab-dhismeedka MGG-ga trilayer ayaa kordhay 50% oo keliya, marka la barbar dhigo 300% graphene-ka trilayer-ka ah ee aan lahayn duubab. Isbeddelka iska caabbinta ee hoos yimaada culeyska cadaadiska wareegga ayaa la baaray. Isbarbardhig ahaan (Jaantuska 2D), iska caabbinta filimka graphene-ka laba-lakablaha ah ee caadiga ah ayaa kordhay qiyaastii 7.5 jeer ka dib ~700 wareeg oo ah cadaadis 50% toosan waxayna sii kordhaysay iyadoo cadaadisku socdo wareeg kasta. Dhanka kale, iska caabbinta MGG-ga laba-lakablaha ah ayaa kordhay qiyaastii 2.5 jeer ka dib ~700 wareeg. Iyadoo la adeegsanayo cadaadis ilaa 90% jihada barbar socota, iska caabbinta graphene-ka saddex-lakablaha ah ayaa korodhay ~100 jeer ka dib wareegyada 1000, halka ay tahay ~8 jeer oo keliya MGG-ga saddex-lakablaha ah (Jaantuska 2E). Natiijooyinka baaskiilka waxaa lagu muujiyay jaantuska S7. Kordhinta dhaqsaha badan ee iska caabbinta ee jihada cadaadiska barbar socda waa sababtoo ah jihada dildilaaca ayaa si toosan ugu toosan jihada socodka hadda. Kala leexashada iska caabbinta inta lagu jiro cadaadiska rarista iyo dejinta waxaa sabab u ah soo kabashada viscoelastic ee substrate-ka elastomer-ka SEBS. Iska caabbinta xasilloon ee xariijimaha MGG inta lagu jiro baaskiil wadista waxaa sabab u ah joogitaanka duubab waaweyn oo buuxin kara qaybaha dillaacsan ee graphene (sida ay u aragtay AFM), taasoo gacan ka geysaneysa ilaalinta waddo ruxaysa. Dhacdadan ah ilaalinta socodka iyadoo la adeegsanayo waddo ruxaysa ayaa hore loogu soo sheegay filimada birta ama semiconductor-ka ee dillaacay ee ku yaal substrates-ka elastomer (40, 41).
Si aan u qiimeyno filimadan ku salaysan graphene sida elektroodhka albaabka ee aaladaha la fidin karo, waxaan ku daboolnay lakabka graphene lakabka dielectric SEBS (2 μm dhumucdiisuna tahay) waxaanan la soconay isbeddelka awoodda dielectric-ka iyadoo loo eegayo cadaadiska (fiiri Jaantuska 2F iyo Qalabka Dheeraadka ah si aad u hesho faahfaahin). Waxaan aragnay in awoodda leh elektroodhka monolayer-ka caadiga ah iyo elektroodhka graphene-ka laba-lakab leh ay si dhakhso ah u yaraatay sababtoo ah luminta socodka gudaha ee graphene. Taas bedelkeeda, awoodda ay MGG-yadu xidheen iyo sidoo kale graphene-ka saddex-lakab ee caadiga ah waxay muujiyeen koror ku yimaada awoodda leh cadaadiska, taas oo la filayo sababtoo ah hoos u dhaca dhumucda dielectric-ka iyadoo la adeegsanayo cadaadiska. Kordhinta la filayo ee awoodda ayaa si fiican ula mid ahayd qaab-dhismeedka MGG (Jaantuska S8). Tani waxay muujinaysaa in MGG uu ku habboon yahay elektroodhka albaabka ee transistor-yada la fidin karo.
Si loo sii baaro doorka duubista graphene-ka 1D ee ku aaddan dulqaadka cadaadiska ee korantada iyo si wanaagsan loo xakameeyo kala-soocidda u dhaxaysa lakabyada graphene, waxaan isticmaalnay CNT-yada lagu buufiyay si aan u beddelno duubista graphene-ka (fiiri Qalabka Dheeraadka ah). Si aan u dayacno qaab-dhismeedka MGG, waxaan dhignay saddex cufnaan oo CNTs ah (taas oo ah, CNT1).
(A ilaa C) Sawirada AFM ee saddex cufnaan oo kala duwan oo CNTs ah (CNT1)
Si aan si dheeraad ah u fahanno awooddooda sida elektiroonigga fidsan ee elektaroonigga ah, waxaan si nidaamsan u baarnay qaab-dhismeedka MGG iyo G-CNT-G marka ay cadaadis saaran yihiin. Microscopy-ga indhaha iyo mikroskoobka elektaroonigga ee iskaanka (SEM) ma aha habab sifeyn oo wax ku ool ah sababtoo ah labaduba ma laha isbarbardhig midab iyo SEM waxay ku xiran tahay farshaxanno sawireed inta lagu jiro sawir-qaadista elektaroonigga marka graphene uu ku jiro substrate-ka polymer-ka (Jaantusyada S9 iyo S10). Si aan u aragno dusha sare ee graphene ee xaaladdu ku jirto, waxaan soo ururinnay cabbiraadaha AFM ee MGG-yada saddex-lakabka ah iyo graphene-ka caadiga ah ka dib markii aan u gudubnay substrate-yada aadka u khafiifsan (~0.1 mm dhumucdiis) iyo kuwa dabacsan ee SEBS. Sababtoo ah cilladaha gudaha ee graphene-ka CVD iyo dhaawaca dibadda inta lagu jiro habka wareejinta, dildilaaca ayaa si lama huraan ah looga soo saaraa graphene-ka la cadaadiyay, iyadoo cadaadis sii kordhaya, dildilaacyadu ay noqdeen kuwo cufan (Jaantuska 4, A ilaa D). Iyada oo ku xidhan qaab-dhismeedka is-ururinta ee elektiroonigga ku salaysan kaarboonka, dildilaacyadu waxay muujiyaan qaab-dhismeedyo kala duwan (Jaantuska S11) (27). Cufnaanta aagga dildilaaca (oo lagu qeexo aagga dildilaaca/aagga la falanqeeyay) ee graphene-ka lakabka badan leh waa ka yar tahay graphene-ka monolayer ka dib cadaadis, taas oo la jaanqaadaysa kororka gudbinta korontada ee MGG-yada. Dhanka kale, duubabyada badanaa waxaa la arkaa si ay u xidhaan dildilaaca, iyagoo bixinaya waddooyin dheeraad ah oo gudbiya filimka la cadaadiyay. Tusaale ahaan, sida lagu calaamadeeyay sawirka Jaantuska 4B, duubab ballaaran ayaa ka gudbay dildilaaca MGG-ga saddex-geesoodka ah, laakiin ma jirin duubab lagu arkay graphene-ka caadiga ah (Jaantuska 4, E ilaa H). Sidoo kale, CNT-yadu waxay sidoo kale xidheen dildilaaca graphene-ka (Jaantuska S11). Cufnaanta aagga dildilaaca, cufnaanta aagga duubista, iyo qallafsanaanta filimada waxaa lagu soo koobay Jaantuska 4K.
(A ilaa H) Sawirada AFM ee ku jira saddex-lakab ee G/G (A ilaa D) iyo qaab-dhismeedka saddex-lakab ee G (E ilaa H) oo ku yaal elastomer aad u khafiif ah (~0.1 mm dhumucdiis) oo ah 0, 20, 60, iyo 100% cadaadis. Dildilaacyada iyo duubista matalaya waxaa lagu tilmaamay fallaadho. Dhammaan sawirrada AFM waxay ku jiraan aag ah 15 μm × 15 μm, iyagoo isticmaalaya isla baarka cabbirka midabka sida lagu calaamadeeyay. (I) Joomatari jilitaan oo ah elektroodhada graphene ee monolayer qaabaysan oo ku yaal substrate-ka SEBS. (J) Khariidadda qaabka jilitaan ee cadaadiska ugu badan ee logarithmic ee ugu weyn ee graphene monolayer iyo substrate-ka SEBS ee 20% cadaadis dibadeed. (K) Isbarbardhigga cufnaanta aagga dillaaca (tiirka cas), cufnaanta aagga rogrogmada (tiirka jaallaha ah), iyo qallafsanaanta dusha sare (tiirka buluugga ah) ee qaab-dhismeedka graphene ee kala duwan.
Marka filimada MGG la fidiyo, waxaa jira farsamo dheeraad ah oo muhiim ah oo duubabku ay isku xiri karaan meelaha dillaacsan ee graphene, iyagoo ilaalinaya shabakad wareegta. Duubabka graphene waa kuwo rajo leh sababtoo ah waxay noqon karaan tobanaan micrometer dherer ahaan sidaas darteedna waxay awood u leeyihiin inay xiraan dildilaacyada badanaa gaaraya cabbirka micrometer-ka. Intaa waxaa dheer, sababtoo ah duubabku waxay ka kooban yihiin lakabyo badan oo graphene ah, waxaa la filayaa inay yeeshaan iska caabin hoose. Marka la barbardhigo, shabakadaha CNT ee cufan (gudbinta hoose) ayaa looga baahan yahay inay bixiyaan awood isku mid ah oo isku-xidhka gudbinta, maadaama CNT-yadu ay ka yar yihiin (badanaa dhowr micrometers dherer ahaan) oo ay ka yar yihiin duubabku. Dhanka kale, sida lagu muujiyey Jaantuska S12, halka graphene-ku uu dillaaco inta lagu jiro fidinta si uu u daboolo cadaadiska, duubabku ma dillaacaan, taasoo muujinaysa in kan dambe uu ku simbiriirixan karo graphene-ka hoose. Sababta aysan u dillaacin waxay u badan tahay inay sabab u tahay qaab-dhismeedka la duubay, oo ka kooban lakabyo badan oo graphene ah (~1 ilaa 2 0 μm dherer ah, ~0.1 ilaa 1 μm ballac ah, iyo ~10 ilaa 100 nm dherer ah), kaas oo leh modules waxtar leh oo ka sarreeya graphene-ka hal-lakabka ah. Sida ay soo sheegeen Green iyo Hersam (42), shabakadaha CNT ee birta ah (dhexroorka tuubada ee 1.0 nm) waxay gaari karaan iska caabin xaashi hoose <100 ohms/sq inkastoo iska caabinta isku xirka weyn ee u dhexeeya CNTs. Iyadoo la tixgelinayo in duubabka graphene-keena ay leeyihiin ballacyo ah 0.1 ilaa 1 μm iyo in duubabka G/G ay leeyihiin meelo xiriir oo aad uga weyn CNTs, iska caabbinta xiriirka iyo aagga xiriirka ee u dhexeeya duubabka graphene iyo graphene waa inaysan noqon arrimo xaddidaya si loo ilaaliyo gudbinta sare.
Graphene-ku wuxuu leeyahay module aad uga sarreeya substrate-ka SEBS. In kasta oo dhumucda waxtarka leh ee elektroodka graphene uu aad uga hooseeyo kan substrate-ka, adkaanta graphene-ka marka loo eego dhumucdeeda waxay la mid tahay tan substrate-ka (43, 44), taasoo keentay saameyn jasiirad adag oo dhexdhexaad ah. Waxaan ku dayanay qaab-dhismeedka graphene 1-nm-qaro ah oo ku yaal substrate-ka SEBS (fiiri Qalabka Dheeraadka ah si aad u hesho faahfaahin dheeraad ah). Sida laga soo xigtay natiijooyinka jilitaanka, marka 20% cadaadis lagu mariyo substrate-ka SEBS dibadda, celceliska cadaadiska graphene-ku waa ~6.6% (Jaantuska 4J iyo jaantuska S13D), kaas oo la jaanqaadaya indha-indheynta tijaabada ah (fiiri jaantuska S13). Waxaan isbarbar dhignay cadaadiska gobollada graphene iyo substrate-ka ee qaabaysan annagoo adeegsanayna mikroskoobka indhaha waxaanan ogaanay in cadaadiska gobolka substrate-ka uu yahay ugu yaraan laba jibaar culeyska gobolka graphene. Tani waxay muujinaysaa in cadaadiska lagu dabaqay qaababka elektroodka graphene-ka si weyn loo xaddidi karo, taasoo sameysanaysa jasiirado adag oo graphene ah oo ku yaal dusha sare ee SEBS (26, 43, 44).
Sidaa darteed, awoodda elektroodka MGG ay u leeyihiin inay ilaaliyaan socodka sare ee cadaadiska sare waxaa u badan tahay inay suurtogal ka dhigaan laba farsamo oo waaweyn: (i) Duubabka duuban waxay isku xiri karaan gobollada kala go'an si ay u ilaaliyaan marin socod gudbiye ah, iyo (ii) xaashida graphene/elastomer-ka lakabka badan leh ayaa laga yaabaa inay is dul fuulaan, taasoo keenta hoos u dhac ku yimaada cadaadiska elektroodka graphene. Lakabyo badan oo graphene ah oo la wareejiyay oo ku yaal elastomer, lakabyadu si xooggan iskuma xirna, kuwaas oo laga yaabo inay simbiriirixan karaan iyagoo ka jawaabaya cadaadiska (27). Duubabka duuban waxay sidoo kale kordhiyeen qallafsanaanta lakabka graphene, taas oo gacan ka geysan karta kordhinta kala-soocidda lakabka graphene sidaas darteedna suurtogelin karta simbiriirixidda lakabka graphene.
Aaladaha kaarboon-ka oo dhan waxaa si xamaasad leh loogu raadraacaa sababtoo ah kharash yar iyo wax-soo-saar sare. Xaaladdayada, transistors-ka kaarboon-ka oo dhan waxaa lagu sameeyay iyadoo la adeegsanayo irrid graphene hoose, xiriir isha/daadinta graphene sare, semiconductor CNT oo kala soocan, iyo SEBS oo ah dielectric (Jaantuska 5A). Sida ku cad Jaantuska 5B, qalab kaarboon-ka oo dhan ah oo leh CNTs oo ah isha/daadinta iyo albaabka (qalabka hoose) ayaa ka daahsan qalabka leh elektroodhada graphene (qalabka sare). Tani waa sababta oo ah shabakadaha CNT waxay u baahan yihiin dhumuc weyn iyo, sidaas darteed, gudbinta indhaha oo hooseeya si loo gaaro iska caabinta xaashida oo la mid ah kan graphene (Jaantuska S4). Jaantuska 5 (C iyo D) wuxuu muujinayaa qaloocyada wareejinta iyo soo-saarka matalaya ka hor cadaadiska transistor-ka lagu sameeyay elektroodhada MGG ee laba-lakabka ah. Ballaca kanaalka iyo dhererka transistor-ka aan la xakamayn waxay ahaayeen 800 iyo 100 μm, siday u kala horreeyaan. Saamiga la cabbiray ee shidista/daminta wuxuu ka weyn yahay 103 iyadoo la adeegsanayo socodka shidista iyo daminta heerarka 10−5 iyo 10−8 A, siday u kala horreeyaan. Qalooca wax soo saarku wuxuu muujinayaa nidaamyada toosan iyo kuwa dheregsan ee ku habboon oo leh ku tiirsanaan cad oo albaabka-danab ah, taasoo muujinaysa xiriirka ugu habboon ee u dhexeeya CNTs iyo elektroodhada graphene (45). Iska caabbinta xiriirka ee elektroodhada graphene waxaa la arkay inay ka hooseyso kan filimka Au ee la uumibixiyey (fiiri jaantuska S14). Dhaqdhaqaaqa dheregsan ee transistor-ka fidsan waa qiyaastii 5.6 cm2/Vs, oo la mid ah kan transistors-ka CNT ee polymer-ka ah ee ku yaal substrate-ka adag ee Si oo leh 300-nm SiO2 oo ah lakab dielectric ah. Horumar dheeraad ah oo ku yimaada dhaqdhaqaaqa ayaa suurtagal ah iyadoo la adeegsanayo cufnaanta tuubada ee la hagaajiyay iyo noocyada kale ee tuubooyinka (46).
(A) Qaabka transistor-ka fidinta ku salaysan graphene. SWNTs, nanotubes-ka kaarboonka ee hal-derbi leh. (B) Sawirka transistor-yada fidinta laga sameeyay elektroodhada graphene (kor) iyo elektroodhada CNT (hoos). Farqiga hufnaanta si cad ayaa loo dareemi karaa. (C iyo D) Qalloocyada wareejinta iyo soo saarista ee transistor-ka ku salaysan graphene ee SEBS ka hor inta aan la riixin. (E iyo F) Qaloocyada wareejinta, shid iyo damin hadda, saamiga shid/damin, iyo dhaqdhaqaaqa transistor-ka ku salaysan graphene ee noocyada kala duwan.
Markii qalabka hufan, oo kaarboon-dhammaan ah lagu fidiyay jihada barbar socota jihada gaadiidka dallacaadda, waxaa la arkay burbur yar ilaa 120% cadaadis. Inta lagu jiro fidinta, dhaqdhaqaaqa si joogto ah ayuu hoos ugu dhacay 5.6 cm2/Vs oo ah cadaadis 0% ilaa 2.5 cm2/Vs oo ah cadaadis 120% ah (Jaantuska 5F). Waxaan sidoo kale isbarbar dhignay waxqabadka transistor-ka ee dhererka kanaalka kala duwan (fiiri jadwalka S1). Waxaa xusid mudan, cadaadis dhan 105%, dhammaan transistor-yadan wali waxay muujiyeen saamiga sare ee shidista/daminta (>103) iyo dhaqdhaqaaqa (>3 cm2/Vs). Intaa waxaa dheer, waxaan soo koobnay dhammaan shaqadii ugu dambeysay ee ku saabsan transistor-yada kaarboon-dhammaan (fiiri jadwalka S2) (47–52). Iyadoo la hagaajinayo wax soo saarka qalabka ee elastomers-ka iyo isticmaalka MGG-yada sida xiriirada, transistor-yadayada kaarboon-dhammaan waxay muujinayaan waxqabad wanaagsan marka loo eego dhaqdhaqaaqa iyo hysteresis-ka iyo sidoo kale inay aad u fidsan yihiin.
Annagoo adeegsanayna transistor-ka si buuxda u hufan oo la fidin karo, waxaan u isticmaalnay inaan xakameyno beddelka LED-ka (Jaantuska 6A). Sida ku cad Jaantuska 6B, LED-ka cagaaran waxaa si cad loogu arki karaa qalabka la fidin karo ee kaarboonka oo dhan ee si toos ah kor loogu dhejiyay. Iyadoo la fidinayo ilaa ~100% (Jaantuska 6, C iyo D), xoogga iftiinka LED-ku isma beddelo, taas oo la jaanqaadaysa waxqabadka transistor-ka ee kor lagu sharaxay (fiiri filimka S1). Kani waa warbixintii ugu horreysay ee cutubyada xakamaynta la fidin karo ee lagu sameeyay elektroodhada graphene, taasoo muujinaysa suurtagal cusub oo loogu talagalay elektaroonigga la fidin karo ee graphene.
(A) Wareegga transistor-ka si uu u wado LED. GND, dhulka. (B) Sawirka transistor-ka oo dhan-kaarboonka ah ee la fidin karo oo hufan oo leh cadaadis 0% ah oo ku rakiban LED cagaaran. (C) Transistor-ka hufan oo dhan-kaarboonka ah ee loo isticmaalo in lagu beddelo LED-ka ayaa lagu rakibayaa LED-ka korkiisa 0% (bidix) iyo ~100% cadaadis (midig). Fallaadhaha cadcad waxay tilmaamayaan calaamadaha jaalaha ah ee qalabka si ay u muujiyaan isbeddelka masaafada oo la fidinayo. (D) Aragtida dhinaca ee transistor-ka la fidiyay, iyadoo LED-ku uu ku riixayo elastomer-ka.
Gunaanadkii, waxaan samaynay qaab-dhismeed graphene ah oo hufan oo gudbiya koronto kaas oo ilaaliya koronto badan oo hoos yimaada noocyo waaweyn sida elektroodhyo fidsan, oo ay suurtagelisay nanoscrolls graphene inta u dhaxaysa lakabyada graphene ee la isku dhejiyay. Qaab-dhismeedka elektroodka MGG ee laba-lakabka ah iyo saddex-lakabka ah ee ku yaal elastomer-ka waxay ilaalin karaan 21 iyo 65%, siday u kala horreeyaan, koronto 0% ah oo ku socota cadaadis ilaa 100%, marka la barbar dhigo luminta buuxda ee koronto 5% ah oo ku socota elektroodhyada graphene ee caadiga ah. Waddooyinka dheeraadka ah ee gudbiya ee duubabka graphene iyo sidoo kale isdhexgalka daciifka ah ee u dhexeeya lakabyada la wareejiyay waxay gacan ka geystaan ​​​​xasilloonida korantada ee sareysa ee cadaadiska. Waxaan sidoo kale u adeegsanay qaab-dhismeedkan graphene si aan u samayno transistors-ka fidi kara ee kaarboonka oo dhan. Ilaa hadda, kani waa transistor-ka ku salaysan graphene-ka ugu fidi kara oo leh hufnaan ugu fiican iyada oo aan la isticmaalin buckling. Inkasta oo daraasaddan hadda la sameeyay si loogu suurtogeliyo graphene elektaroonigga fidin kara, waxaan aaminsanahay in habkan loo fidin karo agabyada kale ee 2D si loo awoodsiiyo elektaroonigga 2D ee fidin kara.
Graphene-ka CVD ee baaxadda weyn waxaa lagu beeray foornooyinka Cu ee la laalay (99.999%; Alfa Aesar) iyadoo cadaadis joogto ah oo ah 0.5 mtorr oo leh 50–SCCM (sentimitir cubic ah daqiiqaddii) CH4 iyo 20–SCCM H2 oo ah horudhac heerkul ah 1000°C. Labada dhinac ee foornooyinka Cu waxaa daboolay graphene monolayer ah. Lakab khafiif ah oo PMMA ah (2000 rpm; A4, Microchem) ayaa lagu dahaadhay dhinac ka mid ah foornooyinka Cu, taasoo samaysay qaab-dhismeed PMMA/G/Cu foil/G ah. Ka dib, filimka oo dhan waxaa lagu qooyay xal 0.1 M ammonium persulfate [(NH4)2S2O8] ah muddo 2 saacadood ah si looga saaro foornooyinka Cu. Inta lagu guda jiray hawshan, graphene-ka dambe ee aan la ilaalin ayaa marka hore jeexjeexay xuduudaha hadhuudhka ka dibna loo duubay duubab sababtoo ah xiisadda dusha sare. Duubabka waxaa lagu dhejiyay filimka graphene-ka sare ee PMMA ay taageerto, iyagoo sameeyay duubab PMMA/G/G ah. Filimada waxaa markii dambe dhowr jeer lagu dhaqay biyo la kala diray oo la saaray substrate-ka bartilmaameedka ah, sida SiO2/Si adag ama substrate balaastig ah. Isla markii filimka ku lifaaqan uu ku qalalo substrate-ka, muunadda waxaa si isdaba joog ah loogu qooyay acetone, 1:1 acetone/IPA (isopropyl alcohol), iyo IPA muddo 30 ilbiriqsi ah midkiiba si looga saaro PMMA. Filimada waxaa lagu kululeeyay 100°C muddo 15 daqiiqo ah ama waxaa lagu hayay faakiyuum habeenkii si gebi ahaanba looga saaro biyaha ku xayiran ka hor inta aan lakab kale oo G/G ah lagu wareejin. Tallaabadani waxay ahayd in laga fogaado in filimka graphene laga soo saaro substrate-ka lana hubiyo in si buuxda loo daboolo MGG-yada inta lagu jiro sii deynta lakabka PMMA.
Qaab-dhismeedka qaab-dhismeedka MGG waxaa lagu arkay iyadoo la adeegsanayo mikroskoobo muuqaal ah (Leica) iyo mikroskoobo elektaroonik ah oo sawiran (1 kV; FEI). Mikroskoobo xoog atomi ah (Nanoscope III, Qalabka Dijitaalka ah) ayaa lagu shaqeeyay habka taabashada si loo eego faahfaahinta duubabka G. Hufnaanta filimka waxaa lagu tijaabiyay mikroskoobo la arki karo oo ultraviolet-ka ah (Agilent Cary 6000i). Tijaabooyinka marka cadaadisku uu ku socday jihada toosan ee socodka hadda, sawir-qaadista iyo balaasmaha O2 ayaa loo isticmaalay in lagu qaabeeyo qaab-dhismeedka graphene xariijinno (~ 300 μm ballac iyo ~ 2000 μm dherer), elektroodhada Au (50 nm) waxaa lagu shubay kuleylka iyadoo la isticmaalayo maaskaro hooska labada daraf ee dhinaca dheer. Xariijimaha graphene-ka ayaa markaa la geliyay elastomer SEBS (~2 cm ballac iyo ~5 cm dherer), iyadoo dhidibka dheer ee xariijimaha ay barbar socdaan dhinaca gaaban ee SEBS oo ay ku xigto BOE (buffered oxide etch) (HF:H2O 1:6) iyo eutectic gallium indium (EGaIn) oo ah xiriir koronto. Tijaabooyinka cadaadiska ee isbarbar socda, qaab-dhismeedka graphene ee aan qaabaysnayn (~5 × 10 mm) ayaa loo wareejiyay substrate-yada SEBS, iyadoo faasas dhaadheer ay barbar socdaan dhinaca dheer ee substrate-ka SEBS. Labada xaaladoodba, G oo dhan (oo aan lahayn G scrolls)/SEBS waxaa lagu fidiyay dhinaca dheer ee elastomer-ka iyadoo la adeegsanayo qalab gacan ku haynta ah, waxaanan ku cabbirnay isbeddellada iska caabbinta ee cadaadiska saldhigga baaritaanka iyadoo la adeegsanayo falanqeeye semiconductor ah (Keithley 4200-SCS).
Transistors-ka kaarboon-ka ah ee aadka u fidsan oo hufan ee ku yaal substrate laastikada ah waxaa lagu sameeyay hababka soo socda si looga fogaado waxyeelada dareeraha dabiiciga ah ee dielectric-ka polymer-ka iyo substrate-ka. Qaab-dhismeedka MGG waxaa loo wareejiyay SEBS sida elektroodhada albaabka. Si loo helo lakab polymer-ka ah oo khafiif ah oo isku mid ah (2 μm dhumucdiis), xal SEBS toluene ah (80 mg/ml) ayaa lagu dahaadhay substrate octadecyltrichlorosilane (OTS) oo wax laga beddelay SiO2/Si 1000 rpm muddo 1 daqiiqo ah. Filimka dielectric-ka khafiifka ah si fudud ayaa looga wareejin karaa dusha sare ee OTS-ka hydrophobic ilaa substrate-ka SEBS ee lagu daboolay graphene-ka sida loo diyaariyey. Capacitor-ka waxaa lagu samayn karaa iyadoo la dhigayo elektroodka sare ee birta dareeraha ah (EGaIn; Sigma-Aldrich) si loo go'aamiyo capacitance-ka iyadoo loo adeegsanayo mitirka LCR (inductance, capacitance, resistance) (Agilent). Qaybta kale ee transistor-ka waxay ka koobnayd CNT-yada semiconducting-ka polymer-ka ah, iyadoo la raacayo habraacyada hore loo soo sheegay (53). Elektroodka isha/daadinta ee qaabaysan ayaa lagu sameeyay substrate-yada adag ee SiO2/Si. Dabadeed, labada qaybood, dielectric/G/SEBS iyo CNTs/qaabaysan G/SiO2/Si, ayaa la isku dahaadhay, waxaana lagu qooyay BOE si looga saaro substrate-ka adag ee SiO2/Si. Sidaas darteed, transistors-ka si buuxda u hufan oo la fidin karo ayaa la sameeyay. Tijaabada korontada ee cadaadiska ku jirta waxaa lagu sameeyay hab-fidin gacanta ah sida habka kor ku xusan.
Agab dheeraad ah oo loogu talagalay maqaalkan waxaa laga heli karaa http://advances.sciencemag.org/cgi/content/full/3/9/e1700159/DC1
Jaantuska S1. Sawirrada mikroskoobka indhaha ee MGG monolayer-ka ah ee ku yaal substrate-ka SiO2/Si ee weynayn kala duwan.
Jaantuska S4. Isbarbardhigga iska caabinta xaashida laba-baaritaan iyo gudbinta @550 nm ee graphene-ka caadiga ah ee mono-, bi- iyo trilayer (labajibbaarane madow), MGG (goobaabin cas), iyo CNTs (saddex-xagalka buluugga ah).
Jaantuska S7. Isbeddel iska caabin caadi ah oo MGG-yada mono- iyo laba-lakabka ah (madow) iyo G (casaan) oo hoos yimaada ~1000 nooc wareeg ah oo raraya ilaa 40 iyo 90% nooc isbarbar socda, siday u kala horreeyaan.
Jaantuska S10. Sawirka SEM ee MGG saddex-lakab ah oo ku yaal elastomer-ka SEBS ka dib cadaadis, oo muujinaya isgoys dheer oo dul maraya dhowr dildilaac.
Jaantuska S12. Sawirka AFM ee MGG saddex-laydh ah oo ku yaal elastomer SEBS oo aad u khafiif ah oo leh 20% cadaadis, taasoo muujinaysa in duub uu ka gudbay dildilaac.
Shaxda S1. Dhaqdhaqaaqa transistors-ka kaarboon-nanotube-ka ee laba-lakab leh ee MGG-hal-derbi leh dherer kala duwan oo kanaal ah ka hor iyo ka dib qalalaasaha.
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FIIRO GAAR AH: Waxaan codsaneynaa cinwaankaaga iimaylka si qofka aad bogga ku talineyso uu u ogaado inaad rabtay inuu arko, iyo inaysan ahayn boostada qashinka ah. Ma qabanno wax cinwaan iimayl ah.
Su'aashani waa in la tijaabiyo inaad tahay booqde aadane iyo in kale iyo in laga hortago soo gudbinta spam ee otomaatiga ah.
By Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
By Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
© 2021 Ururka Maraykanka ee Horumarinta Sayniska. Dhammaan xuquuqaha way xifdiyeen AAAS waa lammaane HINARI, AGORA, OARE, CHORUS, CLOCKSS, CrossRef iyo COUNTER. Horumarka Sayniska ISSN 2375-2548.