Qalabka laba-geesoodka ah, sida graphene, ayaa soo jiidanaya codsiyada semiconductor-ka caadiga ah iyo codsiyada curdanka ah ee qalabka elektaroonigga ah ee dabacsan.Si kastaba ha noqotee, xoogga sare ee graphene waxay keentaa jabka cadaadiska hooseeya, taas oo ka dhigaysa mid adag in laga faa'iidaysto alaabteeda elektaroonigga ah ee aan caadiga ahayn ee qalabka elektaroonigga ah.Si loo suurtageliyo waxqabadka ugu fiican ee ku-tiirsanaanta ee daaranayaasha garaafyada hufan, waxaan ku abuurnay nanoscrolls graphene inta u dhaxaysa lakabyada garaafyada ee is dulsaaran, oo loo tixraaco duubista graphene/graphene multilayer (MGGs).Cadaadiska hoostiisa, duub-duubyada qaar ayaa isku xiray qaybaha kala-go'an ee graphene si ay u ilaashadaan isku-xidhka qulqulaya taasoo awood u siisay firfircooni heer sare ah.Trilayer MGGs ee lagu taageeray elastomers waxa ay haysteen 65% dhaqankoodii asalka ahaa 100% cadaadis, kaas oo u dhigma jihada socodka hadda, halka filimada trilayer ee graphene aan lahayn nanoscrolls ay haysteen kaliya 25% dhaqankooda bilawga ah.Taransistor-kaarboon oo dhan oo la fidsan karo ayaa la sameeyay iyadoo la adeegsanayo MGGs iyadoo korontodu ay soo bandhigtay gudbinta>90% waxayna sii haysataa 60% wax soo saarkeeda asalka ah ee hadda jira 120% (oo barbar socda jihada gaadiidka kharashka).Kuwan aadka loo fidi karo oo hufan dhammaan transistor-ka karbontu waxay awood u siin karaan optoelectronics fidsan oo casri ah.
Qalabka elektiroonigga ah ee daah-furan ee la fidin karo waa beer sii kordheysa oo leh codsiyo muhiim ah oo ku jira nidaamyada horumarsan ee biointegrated (1, 2) iyo sidoo kale suurtagalnimada in lagu dhex daro optoelectronics la fidsan karo (3, 4) si loo soo saaro robotics jilicsan oo casri ah iyo bandhigyo.Graphene waxa uu soo bandhigaa sifooyin aad loo jecel yahay oo dhumucdiisuna tahay atomiga, hufnaanta sare, iyo hufnaanta sare, laakiin hirgelinteeda codsiyada la fidin karo ayaa la joojiyay iyada oo u janjeerta inay dillaacdo noocyada yaryar.Ka gudubka xaddidaadyada farsamada ee graphene waxay awood u siin kartaa shaqeyn cusub oo ku jirta aaladaha hufan ee fidsan.
Tilmaamaha gaarka ah ee graphene waxay ka dhigaan musharax xooggan jiilka soo socda ee korantada korantada ee hufan (5, 6).Marka la barbar dhigo kaaraha hufan ee inta badan la isticmaalo, indium tin oxide [ITO;100 ohms/square (sq) at 90% hufnaanta], monolayer graphene koray by kaydinta uumiga kiimikada (CVD) waxay leedahay isku darka la mid ah caabbinta xaashida (125 ohms / sq) iyo daahfurnaanta (97.4%) (5).Intaa waxaa dheer, filimada graphene waxay leeyihiin dabacsanaan aan caadi ahayn marka loo eego ITO (7).Tusaale ahaan, dusha balaastigga ah, maamulkiisa waa lagu hayn karaa xitaa leexinta qalooca ee yar sida 0.8 mm (8).Si loo sii wanaajiyo waxqabadkeeda korantada sida kaari dabacsan oo hufan, shaqooyinkii hore waxay soo saareen qalab isku-dhafan oo graphene ah oo leh hal-cabbir (1D) nanowires silver ama kaarboon nanotubes (CNTs) (9-11).Waxaa intaa dheer, graphene waxaa loo isticmaalay sidii elektaroonigga loogu talagalay semiconductors heterostructural cabbir isku dhafan (sida 2D bulk Si, 1D nanowires / nanotubes, iyo 0D quantum dhibcood) –23).
Inkasta oo graphene ay muujisay natiijooyin rajo leh oo loogu talagalay qalabka elektaroonigga ah ee dabacsan, codsigeeda elektaroonigga ah ee la fidin karo ayaa xaddiday sifooyinka farsamada (17, 24, 25);graphene waxa uu leeyahay qallafsanaanta diyaaradda gudaheeda 340 N/m iyo modules-ka dhallinta oo ah 0.5 TPa (26).Shabakadda karbon-kaarboon ee xooggani ma bixiso wax tamar ah oo baabi'in kara cadaadiska la isticmaalay sidaas awgeedna si fudud ayay u dildillaacdaa in ka yar 5% cadaadis.Tusaale ahaan, graphene CVD oo lagu wareejiyo substrate-ka laastikada ah ee polydimethylsiloxane (PDMS) waxay kaliya ku ilaalin kartaa dhaqdhaqaaqeeda wax ka yar 6% cadaadis (8).Xisaabinta aragtiyeedku waxay tusinaysaa in isku-duubnida iyo is-dhexgalka u dhexeeya lakabyo kala duwan ay tahay inay si xooggan hoos ugu dhigto qallafsanaanta (26).Marka la isku dhufto graphene ee lakabyo badan, waxaa la sheegay in graphene-kan laba-ama trilayer uu yahay mid la fidin karo ilaa 30% cadaadis, muujinayo isbeddel iska caabin ah 13 jeer ka yar kan monolayer graphene (27).Si kastaba ha ahaatee, fiditaankani wali aad ayuu uga hooseeyaa c onductor-ka la fidin karo ee casriga ah (28, 29).
Transistor-yadu waxay muhiim u yihiin codsiyada la fidin karo sababtoo ah waxay awood u siinayaan akhrinta dareemayaasha casriga ah iyo falanqaynta calaamadaha (30, 31).Transistor-ka PDMS ee leh graphene multilayer sida isha / dareeraha korantada iyo walxaha kanaalka ayaa ilaalin kara shaqada korantada ilaa 5% cadaadis (32), taas oo si weyn uga hooseysa qiimaha ugu yar ee loo baahan yahay (~ 50%) ee dareemayaasha kormeerka caafimaadka ee xiran iyo maqaarka elektiroonigga ah 33, 34).Dhowaan, habka graphene kirigami ayaa la sahamiyay, transistor-ka lagu xiray dareeraha dareeraha ah waxaa lagu fidin karaa ilaa 240% (35).Si kastaba ha ahaatee, habkani wuxuu u baahan yahay graphene la hakiyey, kaas oo adkeynaya habka wax-soo-saarka.
Halkan, waxaan ku gaadhnay aaladaha garaafyada aadka loo fidin karo anagoo isdhexgalinayna duubabka garaafyada (~ 1 ilaa 20 μm dhererka, ~ 0.1 ilaa 1 μm ballaaran, iyo ~ 10 ilaa 100 nm sare) inta u dhaxaysa lakabyada graphene.Waxaan qiyaasaynaa in buug-garaafyadan garaafyada ah ay ku siin karaan waddooyin si ay uga gudbaan dildilaaca xaashida graphene, si loo ilaaliyo dhaqdhaqaaqa sare ee cadaadiska.Duubabka garaafyada uma baahna hab-raac ama habraac dheeraad ah;Waxay si dabiici ah u sameysmeen inta lagu jiro habka wareejinta qoyan.Anagoo adeegsanayna multilayer G/G (graphene/graphene) rolls (MGGs) graphene electrodes la fidin karo ( isha/daadidka iyo albaabka) iyo semiconducting CNTs, waxaan awoodnay inaan muujino si aad u hufan oo aad loo fidsan karo dhamaan transistors-kaarboon, kaas oo lagu fidin karo 120 % cadaadis (oo barbar socda jihada gaadiidka kharashka) oo haysta 60 % wax soo saarkooda asalka ah hadda.Kani waa transistor-ka kaarboon-ku-salaysan ee daah-furan ee ugu fidsan ilaa hadda, wuxuuna bixiyaa hadda ku filan si loo kaxeeyo LED-ka aan noolaha lahayn.
Si loo suurtogeliyo aag-weyn oo daah-furnaan ah oo la fidsan karo electrodes graphene, waxaanu ku dooranay graphene koray CVD on Cu foil.Faylka Cu ayaa lagu hakiyay bartamaha tuubada Quartz ee CVD si loogu oggolaado korriinka graphene ee labada dhinac, samaynta qaababka G/Cu/G.Si loo wareejiyo graphene, marka hore waxaanu daboolay lakab khafiif ah oo poly (methyl methacrylate) (PMMA) si aanu u ilaalino hal dhinac oo garaafka ah, kaas oo aan u magacownay graphene topside (oo ka soo horjeeda dhinaca kale ee graphene), ka dibna, Filimka oo dhan (PMMA/garaafka sare/Cu/graphene hoose) ayaa lagu qooyay (NH4) 2S2O8 si loo tirtiro xaashida Cu.Garaafka dhinaca hoose ee aan lahayn dahaarka PMMA ayaa si aan macquul ahayn u yeelan doona dildilaacyo iyo cillado u oggolaanaya in ay ka soo dhex gasho (36, 37).Sida ku cad shaxanka 1A, saamaynta xiisadda dusha sare, xayndaabka graphene ee la sii daayay ayaa la isku duubay oo ka dibna lagu dhejiyay filimka sare ee G/PMMA.Duubabka-G/G-ga ugu sarreeya waxa lagu wareejin karaa substrate kasta, sida SiO2/Si, galaas, ama polymer jilicsan.Ku celcelinta habka wareejinta dhawr jeer isla substrate waxay siinaysaa qaab dhismeedka MGG.
(A) Sharaxaada habraaca soo saarista ee MGGs oo ah koronto la fidin karo.Inta lagu guda jiro wareejinta graphene, graphene dhabarka ee Cu foil ayaa la jebiyey xuduudaha iyo cilladaha, la duubay qaab aan sabab lahayn, oo si adag loogu dhejiyay filimada sare, samaynta nanoscrolls.Kartoonka afraad waxa uu muujinayaa qaab dhismeedka MGG ee is dulsaaran.(B iyo C) Tilmaamaha TEM-ga-sare ee MGG monolayer, oo diiradda saaraya graphene monolayer (B) iyo duudduuban (C) gobolka, siday u kala horreeyaan.Gelitaanka (B) waa sawir-weynayn hoose oo muujinaya qaab-dhismeedka guud ee monolayer MGGs ee shabagga TEM.Gelida (C) waa muuqaallada xoogga leh ee laga soo qaaday sanduuqyada leydiga ah ee lagu tilmaamay sawirka, halkaasoo masaafada u dhexeysa diyaaradaha atomiga ay yihiin 0.34 iyo 0.41 nm.D(E) Sawirka qaybta AFM ee duubabyada monolayer G/G oo leh muuqaal dherer ah oo weheliya xariiqda jaalaha ah.(F ilaa I) Mikroskoobiga indhaha iyo sawirka AFM ee trilayer G oo aan lahayn (F iyo H) iyo duubab (G iyo I) ee 300-nm- dhumucdiisuna waxay SiO2/Si ah, siday u kala horreeyaan.Laalaabyada iyo laalaabyada metelaya ayaa la calaamadeeyay si loo muujiyo kala duwanaanshahooda.
Si loo xaqiijiyo in duubabyadu ay dabiciga yihiin graphene duuban, waxaanu samaynay baadhis heersare ah oo gudbinta elektaroonigga ah (TEM) iyo luminta tamarta elektarooniga (EEL) daraasadaha spectroscopy-ga monolayer top-G/G.Jaantuska 1B waxa uu tusinayaa qaabdhismeedka laba geesoodka ah ee graphene monolayer ah, iyo galmadu waa qaab-dhismeedka guud ee filimka oo lagu daboolay hal dalool oo kaarboon ah ee shabagga TEM.Garaafka monolayer-ka ah waxa uu ku fidsan yahay inta badan shabaqyada, iyo qaar ka mid ah jajabyada garaafyada marka ay joogaan xidhmo badan oo siddo laba geesood ah ayaa soo muuqda (Jaantus. 1B).Markaan ku soo koobnay duubitaan shaqsiyeed (Jaantus. 1C), waxaan ku aragnay xaddi badan oo geesaha shabkada graphene, oo kala fogaanshiyaha shabagga ee u dhexeeya 0.34 ilaa 0.41 nm.Cabiraadahani waxay soo jeedinayaan in jajabyada si aan kala sooc lahayn loo duudduubay oo aanay ahayn garaaf ahaan qumman, kaas oo leh meel bannaan oo 0.34 nm ah lakabka "ABAB".Jaantuska 1D waxa uu tusinayaa kaarboonka K-edge EEL spectrum, halka ugu saraysa ee 285 eV ka soo jeedo π* orbital iyo tan kale ee ku dhow 290 eV ay sabab u tahay kala guurka σ* orbital.Waxaa la arki karaa in isku xidhka sp2 uu ku sarreeyo qaabkan, iyadoo la xaqiijinayo in duubabyadu ay yihiin kuwo garaaf sare leh.
Sawirada mikroskoobyada indhaha iyo xoogga atomiga ah (AFM) waxay bixiyaan aragtida qaybinta nanoscrolls graphene ee MGGs (Jaantus. 1, E ilaa G, iyo berdaha. S1 iyo S2).Duubabka ayaa si aan kala sooc lahayn loogu qaybiyay dusha sare, cufnaantooda diyaaraddana waxay u korodhaa si siman tirada lakabyada is dulsaaran.Duub-duubyo badan ayaa la isku dhex galiyay guntimo waxayna muujinayaan dhererka aan nuuniform-ka lahayn ee u dhexeeya 10 ilaa 100 nm.Dhererkoodu waa 1 ilaa 20 μm iyo 0.1 ilaa 1 μm oo ballac ah, taas oo ku xidhan cabbirrada jajabkooda garaafka hore.Sida ku cad sawirka 1 (H iyo I), duubabyadu waxay leeyihiin cabbir aad uga weyn laalaabyada, taasoo horseedaysa is dhexgal aad u qallafsan oo u dhexeeya lakabyada graphene.
Si loo cabbiro guryaha korantada, waxaanu qaabaynay filimada graphene leh ama aan lahayn qaab-dhismeedka duuban iyo lakabka isku dhejinaya 300-μm-ballaaran iyo 2000-μm-fiilis-dheer iyadoo la isticmaalayo sawir-qaadista.Iska caabin laba-baaritaan ah oo shaqo ahaan cadaadis ah ayaa lagu cabiray xaaladaha jawiga.Joogitaanka duubista ayaa hoos u dhigtay iska caabbinta monolayer graphene 80% iyada oo kaliya 2.2% hoos u dhac ku yimid gudbinta (fig. S4).Tani waxay xaqiijinaysaa in nanoscrolls, kuwaas oo leh cufnaanta sare ee hadda jirta ilaa 5 × 107 A/cm2 (38, 39), waxay ka dhigayaan waxtar koronto oo aad u wanaagsan MGGs.Dhammaan mono-, bi-, iyo trilayer graphene cad iyo MGGs, trilayer MGG wuxuu leeyahay hab-dhaqanka ugu fiican oo leh hufnaan ku dhow 90%.Si loo barbar dhigo ilaha kale ee graphene ee lagu sheegay suugaanta, waxaanu sidoo kale cabbirnay caabbinta xaashida afar-baaritaan (fig. S5) waxaanan ku taxnay iyaga oo ah habka gudbinta 550 nm (fig. S6) ee sawirka 2A.MGG waxa ay muujisaa in la barbardhigi karo ama ka saraysa hufnaanta iyo daah-furnaanta ka badan si macmal ah loo dulsaaray graphene multila yer plain graphene iyo graphene oxide (RGO) oo la dhimay (6, 8, 18).Ogsoonow in caabbinta xaashida graphene-ka cad ee si farsamaysan loo raray ee laga helay suugaanta ay waxyar ka sarreeyaan ta MGG-gayada, malaha sababtoo ah xaaladahooda korriinka ee aan la hagaajin iyo habka wareejinta.
(A) Iska caabbinta xaashida afar-baaritaan ah oo ka soo horjeeda gudbinta 550 nm ee dhowr nooc oo graphene ah, halkaasoo labajibaarannada madow ay muujinayaan mono-, bi-, iyo trilayer MGGs;wareegyada cas iyo saddexagalka buluuga ah waxay u dhigmaan graphene cad oo badan oo ka koray Cu iyo Ni ee daraasadaha Li et al.(6) iyo Kim et al.(8), siday u kala horreeyaan, ka dibna loo wareejiyo SiO2/Si ama quartz;iyo saddexagalka cagaaran waa qiyamka RGO ee heerarka dhimista kala duwan ee daraasadda Bonaccorso et al.( 18).(B iyo C) Isbeddelka caabbinta caadiga ah ee mono-, bi- iyo trilayer MGGs iyo G oo ah hawl siman (B) iyo isbarbar (C) cadaadis xagga jihada socodka hadda.(D) Isbeddelka caabbinta caadiga ah ee bilayer G (casaan) iyo MGG (madow) oo ku hoos jira cadaadis wareeg ah oo ku raran ilaa 50% cadaadis toosan.(E) Isbeddelka caabbinta caadiga ah ee trilayer G (casaan) iyo MGG (madow) oo ku hoos jira cadaadis wareeg ah oo ku raran ilaa 90% culeys is barbar socda.(F) Isbeddelka awoodda caadiga ah ee mono-, bi- iyo trilayer G iyo laba-iyo trilayer MGGs oo ah shaqo n of cadaadis ah.Xidhiidhku waa qaab-dhismeedka capacitor-ka, halka substrate-ka polymer-ku yahay SEBS iyo lakabka dielectric polymer-ku waa SEBS-da 2-μm.
Si loo qiimeeyo waxqabadka culeyska ku-tiirsanaanta ee MGG, waxaan u wareejinay graphene dulsaar heerkulbeegga elastomer styrene-etylene-butadiene-styrene (SEBS) substrates (~ 2 cm ballaaran iyo ~ 5 cm dheer), korantada waxaa lagu qiyaasay sida substrate-ka la fidiyay. (eeg Qalabka iyo Hababka) labadaba toosan iyo barbar socda jihada socodka hadda (Jaantus. 2, B iyo C).Dabeecada korantada ee ku tiirsan cadaadiska ayaa soo hagaagtay marka la isku daro nanoscrolls iyo tirada sii kordheysa ee lakabyada graphene.Tusaale ahaan, marka cidhiidhigu u siman yahay qulqulka hadda, ee monolayer graphene, ku darida duubitaanku waxay kordhiyeen culayska jebinta korantada min 5 ilaa 70%.Dulqaadka cadaadiska graphene ee trilayer sidoo kale si weyn ayaa loo hagaajiyay marka la barbar dhigo graphene monolayer.Iyada oo nanoscrolls, at 100% cadaadis siman, caabbinta qaab dhismeedka trilayer MGG kaliya kordhay 50%, marka la barbar dhigo 300% ee graphene trilayer aan duub.Isbeddelka iska caabinta ee culeyska culeyska wareegtada ah ayaa la baaray.Marka la barbardhigo (Jaantus. 2D), iska caabbinta filimka graphene ee cad ee bilayer ah ayaa kordhay qiyaastii 7.5 jeer ka dib ~ 700 wareegyada 50% cadaadiska tooska ah oo sii kordhayay cadaadis wareeg kasta.Dhanka kale, iska caabinta bilayer MGG kaliya ayaa kordhay qiyaastii 2.5 jeer ka dib ~ 700 wareegyo.Codsashada ilaa 90% cadaadiska jihada isku midka ah, caabbinta trilayer graphene ayaa kordhay ~ 100 jeer ka dib wareegyada 1000, halka ay kaliya ~ 8 jeer ku jirto trilayer MGG (Jaantus. 2E).Natiijooyinka baaskiilka waxaa lagu muujiyey berdaha.S7.Kordhinta xoogaa dhaqsaha badan ee iska caabbinta ee ku socota jihada cidhiidhiga ah ee barbar socda waa sababta oo ah jihaynta dildilaaca waa siman yahay jihada socodka hadda.Weecashada iska caabbinta inta lagu jiro culeyska rarista iyo dejinta waxaa sabab u ah soo kabashada viscoelastic ee substrate elastomer SEBS.Iska caabbinta xasiloon ee xariijimaha MGG inta lagu jiro baaskiil wadida waxaa sabab u ah joogitaanka buug-garaacyo waaweyn oo isku xiri kara qaybaha dillaacsan ee graphene (sida ay u fiirsato AFM), ka caawinta in la ilaaliyo dariiqa qulqulaya.Dhacdadan ku saabsan ilaalinta hab-dhaqanka ee dariiqa qulqulaya ayaa hore looga soo sheegay biraha dillaacsan ama filimada semiconductor ee ku yaal substrates elastomer (40, 41).
Si loo qiimeeyo filimadan graphene-ku-salaysan sida korantada albaabka ee aaladaha la fidin karo, waxaan ku daboolnay lakabka graphene lakabka dielectric SEBS (2 μm dhumucdiisuna) waxaana la soconay isbeddelka awoodda dielectric shaqo ahaan cadaadis (eeg sawirka 2F iyo agabka Dheeraadka ah faahfaahin).Waxaan aragnay in awoodaha leh monolayer cad iyo bilayer graphene electrodes si dhakhso ah u yaraadeen sababtoo ah luminta dhaqdhaqaaqa diyaaradda ee graphene.Taas bedelkeeda, awoodaha ay dabooleen MGGs iyo sidoo kale trilayer graphene oo cad ayaa muujiyay koror awood leh cadaadis, taas oo la filayo sababtoo ah hoos u dhigista dhumucda dielectric ee cadaadiska.Korodhka la filayo ee awoodda ayaa si aad ah ugu habboon qaab dhismeedka MGG (fig. S8).Tani waxay muujinaysaa in MGG uu ku habboon yahay korantada albaabka ee transistor-ka la fidsan karo.
Si loo sii baaro doorka duubista garaafyada 1D ee dulqaadka cadaadiska korantada oo si wanaagsan loo xakameeyo kala soocida lakabyada graphene, waxaan isticmaalnay CNT-yo buufis dahaar leh si aan u bedelno duubabka garaafyada (eeg agabka dheeriga ah).Si aan u ekaysiinno qaab-dhismeedka MGG, waxaanu dhignay saddex cufnaanta CNTs (taas oo ah, CNT1).
(A ilaa C) Sawirada AFM ee saddex cufnaanta kala duwan ee CNTs (CNT1
Si aan u sii fahamno awoodooda elektaroonigga ah ee elektaroonigga ah ee la fidi karo, waxaan si nidaamsan u baarnay qaab-dhismeedka MGG iyo G-CNT-G ee culeyska saaran.Mikroskoobyada indhaha iyo mikroskoobyada elektaroonigga ah (SEM) maaha habab sifo waxtar leh sababtoo ah labaduba waxay ka maqan yihiin midab kala duwanaansho iyo SEM waxay ku xiran tahay sawirada sawirada inta lagu jiro baaritaanka elektaroonigga marka graphene uu ku jiro substrates polymer (berdaha. S9 iyo S10).Si loo eego goobta dusha sare ee garaafka ee cadaadiska, waxaanu ku soo ururinay cabbirada AFM ee trilayer MGGs iyo graphene cad ka dib markii aan u gudbinay dhuuban (~ 0.1 mm qaro weyn) iyo substrates SEBS ah.Sababtoo ah cilladaha gudaha ee graphene CVD iyo dhaawaca dibadda inta lagu jiro habka wareejinta, dildilaaca ayaa si lama filaan ah uga soo baxaya garaafka cidhiidhiga ah, iyo cadaadiska sii kordhaya, dildilaaca ayaa noqday cufan (Jaantus. 4, A ilaa D).Iyada oo ku xidhan qaabka is dulsaarka ee electrodes-ku salaysan kaarboon, dildilaaca ayaa soo bandhigay qaab-dhismeedka kala duwan (fig. S11) (27).Cufnaanta aagga dildilaaca (oo lagu qeexay aagga dildilaaca/aagga la falanqeeyay) ee graphene-ka lakabka badan ayaa ka yar kan monolayer graphene ka dib cadaadiska, kaas oo la socda kororka korantada korantada ee MGGs.Dhanka kale, duubabyada ayaa inta badan la arkaa si ay u xiraan dildilaaca, iyaga oo siinaya dariiqyo dheeraad ah oo wax-qabad ah oo ku jira filimka cidhiidhiga ah.Tusaale ahaan, sida ku suntan sawirka Jaantuska 4B, duudduuban ballaaran ayaa ka gudbay dillaac ku yaal trilayer MGG, laakiin wax duub ah laguma arag graphene cad (Jaantus. 4, E ilaa H).Sidoo kale, CNT-yadu waxa ay sidoo kale xidheen dildilaaca graphene (fig. S11).Cufnaanta aagga dildilaaca, cufnaanta aagga duuduubka, iyo qallafsanaanta filimada ayaa lagu soo koobay sawirka 4K.
(A ilaa H) Goobta sawirada AFM ee wareegyada G/G trilayer (A ilaa D) iyo trilayer G qaab dhismeedka (E ilaa H) oo ku yaal SEBS dhuuban (~ 0.1 mm dhumucdiisuna) 0, 20, 60, iyo 100 % cadaadis.Dildilaacyada matalayaasha ah iyo duub-duubyada ayaa lagu tilmaamay fallaadho.Dhammaan sawirada AFM waxay ku yaalliin aag dhan 15 μm × 15 μm, iyadoo la adeegsanayo bar cabirka midabka ah sida lagu calaamadiyay.(I) Joometry jilitaanka ee kolodhada graphene monolayer qaabaysan ee substrate SEBS.(J) Khariidadda qaabaynta jilitaanka ee culayska ugu sarreeya ee logarithmic ee graphene monolayer iyo substrate SEBS oo ah 20% cadaadis dibadda ah.(K) Isbarbardhigga cufnaanta aagga dildilaaca (calaamada cas), cufnaanta aagga rog (calaamada jaalaha ah), iyo qallafsanaanta dusha sare (Tiirka buluuga ah) ee qaababka kala duwan ee garaafka.
Marka filimada MGG ay fidsan yihiin, waxaa jira farsamo dheeri ah oo muhiim ah oo duubitaanadu ay isku xiri karaan gobollada dillaacsan ee graphene, iyagoo ilaalinaya isku-xidhka qulqulka.Duubabka garaafyada ayaa ah kuwo rajo leh sababtoo ah waxay noqon karaan tobanaan mikromitir oo dherer ah oo sidaas darteed waxay awoodaan inay isku xiraan dildilaaca caadiga ah ilaa miisaanka mikrometerka.Intaa waxaa dheer, sababtoo ah duubabku waxay ka kooban yihiin lakabyo badan oo graphene ah, waxaa la filayaa inay yeeshaan iska caabin hoose.Marka la barbardhigo, shabakadaha CNT ee cufan (xawaaladaha hoose) ayaa looga baahan yahay inay bixiyaan awood isku xidhid la mid ah, maadaama CNT-yadu ay ka yar yihiin (sida caadiga ah dhawr mikromitir oo dherer ah) oo ay ka hawl yar yihiin duub-duubyada.Dhanka kale, sida ku cad fig.S12, halka graphene dildilaacyo inta lagu jiro iskala fidinta si uu u daboolo culayska, duubabyadu ma dillaacaan, taas oo muujinaysa in kan dambe laga yaabo inuu ku dul simbiro graphene hoose.Sababta ay u dillaaci waayaan waxay u badan tahay inay sabab u tahay qaab-dhismeedka duuban, oo ka kooban lakabyo badan oo graphene ah (~ 1 ilaa 2 0 μm dheer, ~ 0.1 ilaa 1 μm ballaaran, iyo ~ 10 ilaa 100 nm sare), kaas oo leh modules waxtar badan oo ka sarreeya graphene-ka-lakabka ah.Sida ay soo wariyeen Green iyo Hersam (42), shabakadaha CNT macdan ah (dhexroorka tuubada 1.0 nm) waxay gaari karaan caabbinta xaashida hoose <100 ohms/sq inkastoo iska caabin weyn oo isgoysyada u dhexeeya CNTs.Iyadoo la tixgalinayo in duubabyada garaafyadayadu ay ballac ahaan u yihiin 0.1 ilaa 1 μm iyo in buug-gacmeedyada G/G ay leeyihiin meelo xiriir oo aad uga weyn marka loo eego CNT-yada, iska caabbinta xiriirka iyo goobta xiriirka u dhexeeya buug-garaafyada graphene waa inaysan noqonin arrimo xaddidaya si loo ilaaliyo dhaqdhaqaaqa sare.
Garaafku wuxuu leeyahay modules aad uga sarreeya marka loo eego substrate-ka SEBS.Inkasta oo dhumucda wax ku oolka ah ee korantada graphene ay aad uga hooseyso kan substrate-ka, qallafsanaanta waqtiyada graphene dhumucdiisu waxay la mid tahay kan substrate (43, 44), taasoo keentay saameyn dhexdhexaad ah jasiiradda.Waxaan ku sawirnay naafaynta garaafka dhumucda 1-nm ee substrate SEBS (eeg faahfaahinta agabka dheeriga ah).Marka loo eego natiijooyinka jilitaanka, marka 20% cadaadiska lagu dabaqo substrate SEBS dibadda, celceliska culeyska graphene waa ~ 6.6% (Jaantus. 4J iyo fig. S13D), taas oo la socota indho-indheynta tijaabada ah (eeg fig. S13) .Waxaan is barbar dhignay culeyska garaafyada naqshadeysan iyo gobollada substrate anagoo adeegsanayna mikroskoobyada indhaha waxaanan ogaannay culeyska gobolka substrate inuu ugu yaraan laba jeer ka badan yahay culeyska gobolka graphene.Tani waxay tusinaysaa in culayska lagu dabaqay qaababka elektiroonigga graphene uu si weyn u koobnaan karo, samaynta jasiirado qalafsan oo graphene ah oo ka sarreeya SEBS (26, 43, 44).
Sidaa darteed, awoodda korantada MGG si ay u ilaaliso dhaqdhaqaaqa sare ee cadaadiska sare waxay u badan tahay inay awood u yeelato laba hab oo waaweyn: (i) Duubyada waxay isku xiri karaan gobollada go'an si ay u ilaaliyaan dariiqa qulqulka qulqulka, iyo (ii) xaashiyaha graphene / elastomer-ka badan ayaa simbiriirixan kara. midba midka kale, taasoo keentay hoos u dhac ku yimaada electrodes graphene.Lakabyo badan oo graphene la wareejiyay oo ku yaal elastomer, lakabyadu si adag iskuma xidhna, kuwaas oo laga yaabo inay simbiriirixan uga jawaabaan cadaadiska (27).Duubabka ayaa sidoo kale kordhiyey qallafsanaanta lakabyada graphene, taas oo laga yaabo inay gacan ka geysato kordhinta kala-soocidda lakabyada graphene oo sidaas awgeed awood u silcinta lakabyada graphene.
Aaladaha kaarboonka oo dhan si xamaasad leh ayaa loo daba joogaa sababtoo ah kharash yar iyo soo saarid sare.Xaaladeena, transistors-kaarboonka oo dhan ayaa la sameeyay iyadoo la adeegsanayo albaabka garaafka hoose, xiriirinta isha graphene ee ugu sareysa, semiconductor CNT oo la kala soocay, iyo SEBS sida dielectric (Jaantus. 5A).Sida ku cad sawirka 5B, aaladda kaarboonka ah ee leh CNTs sida isha/darka iyo albaabka (qalabka hoose) ayaa ka mugdi badan marka loo eego qalabka leh electrodes graphene (qalabka sare).Tani waa sababta oo ah shabakadaha CNT waxay u baahan yihiin dhumucyo waaweyn iyo, sidaas awgeed, gudbinta indhaha hoose si ay u gaaraan caabbinta xaashida oo la mid ah kan graphene (fig. S4).Jaantuska 5 (C iyo D) waxay muujinayaan wareejinta wakiillada iyo qalooca wax soo saarka ka hor inta aan culaysin transistor ka samaysan bilayer MGG electrodes.Ballaca kanaalka iyo dhererka transistor-ka aan cidhiidhiga lahayn waxay ahaayeen 800 iyo 100 μm, siday u kala horreeyaan.Saamiga la cabbiray ee shid/damku waxa uu ka weyn yahay 103 oo leh shid iyo ka shid ee heerarka 10-5 iyo 10-8 A, siday u kala horreeyaan.Qalooca wax-soo-saarku wuxuu muujinayaa nidaamyo toosan oo qumman oo leh ku-tiirsanaan cad oo albaabka-voltage ah, taasoo muujinaysa xidhiidhka ugu habboon ee ka dhexeeya CNT-yada iyo electrodes graphene (45).Iska caabbinta xidhiidhka ee electrodes graphene ayaa la arkay in uu ka hooseeyo kan filimka Au ee la uumi baxay (fiiri sawirka S14).Dhaqdhaqaaqa qoyaanka ee transistor-ka la fidi karo waa qiyaastii 5.6 cm2/Vs, oo la mid ah isla taransistarrada CNT ee la isku midka ah ee polymer-ka ee ku yaal substrates Si adag oo leh 300-nm SiO2 oo ah lakab dielectric ah.Horumarin dheeraad ah oo dhaqdhaqaaqa ayaa suurtagal ah cufnaanta tuubada la hagaajiyay iyo noocyada kale ee tuubooyinka (46).
(A) Qorshaha graphene-ku-saleysan transistor la fidin karo.SWNTs, kaarboon nanotubes kaarboon hal gidaar ah.(B) Sawirka transistor-yada la fidin karo ee laga sameeyay electrodes graphene (sare) iyo electrodes CNT (hoose).Farqiga u dhexeeya daahfurnaanta ayaa si cad loo ogaan karaa.(C iyo D) Wareejinta iyo soo saarida curyaaminta transistor-ku-saleysan graphene ee SEBS kahor cadaadiska.(E iyo F) Wareejinta qaloocyada, shidan iyo ka baxa hadda, saamiga shid/off, iyo dhaqdhaqaaqa garaafyada ku salaysan graphene ee noocyada kala duwan.
Markii daah-furnaanta, dhammaan-kaarboonka lagu fidiyay jihada barbar socota jihada gaadiidka, nabaad-guurka ugu yar ayaa la arkay ilaa 120% culays ah.Inta lagu jiro fidinta, dhaqdhaqaaqa wuxuu si joogto ah hoos ugu dhacay 5.6 cm2/Vs 0% cadaadis ilaa 2.5 cm2/Vs oo ah 120% cadaadis (Jaantus. 5F).Waxaan sidoo kale barbar dhignay waxqabadka transistor-ka ee dhererka kanaalka kala duwan (eeg shaxda S1).Waxaa xusid mudan, culeys dhan 105%, dhammaan transistor-yadaan waxay weli soo bandhigeen saamiga sare ee shid/off (>103) iyo dhaqdhaqaaqa (>3 cm2/Vs).Intaa waxaa dheer, waxaan soo koobnay dhammaan shaqadii ugu dambeysay ee transistor-ka kaarboon-dhan (eeg shaxda S2) (47-52).Iyada oo la wanaajinayo samaynta aaladda elastomers iyo adeegsiga MGG-yada xiriir ahaan, transistors-ka-carbon-keena oo dhan waxay muujinayaan waxqabad wanaagsan marka loo eego dhaqdhaqaaqa iyo xiidmaha iyo sidoo kale inay yihiin kuwo si heersare ah loo kala bixin karo.
Codsi ahaan transistor-ka si buuxda u hufan oo la fidi karo, waxaan u isticmaalnay si aan u xakameyno beddelka LED-ka (Jaantus. 6A).Sida ku cad sawirka 6B, LED-ga cagaarka ah waxa si cad loogu arki karaa iyada oo loo marayo qalabka kaarboonka oo dhan ee toos loo dhigo.Iyadoo la fidinayo ~ 100% (Jaantus. 6, C iyo D), iftiinka iftiinka LED isma beddelo, taas oo la socota waxqabadka transistor-ka ee kor lagu sharaxay (eeg filimka S1).Tani waa warbixintii ugu horeysay ee cutubyada kontoroolka la fidi karo ee lagu sameeyay iyadoo la isticmaalayo graphene electrodes, taasoo muujineysa suurtagalnimada cusub ee qalabka elektiroonigga ah ee graphene la fidi karo.
(A) Wareegga transistor si loogu wado LED.GND, dhulka.(B) Sawirka transistor-ka kaarboon-dhan oo la fidi karo oo daah-furan oo ah 0% cadaadis ku rakiban LED-ga cagaaran.(C) Dhammaan-kaarboonka hufan iyo transistor-ka la fidi karo ee loo isticmaalo in lagu beddelo LED-ka waxaa lagu rakibaa korka LED-ka 0% (bidix) iyo ~ 100% cadaadis (midig).Fallaadhaha cadcad waxay tilmaamayaan sida calaamadaha jaalaha ah ee qalabka si ay u muujiyaan isbeddelka masaafada la fidinayo.(D) Aragtida dhinaca ee transistor-ka fidsan, iyadoo LED-ku lagu riixay elastomerka.
Gebagebadii, waxaanu samaynay qaab-dhismeedka garaafeed korantada oo hufan kaasoo ilaalinaya dhaqdhaqaaqa sare ee ka hooseeya noocyada waaweyn sida korantada la fidin karo, oo ay awood u leedahay nanoscrolls graphene inta u dhaxaysa lakabyada garaafyada ee is dulsaaran.Hababkan laba-iyo-trilayer MGG ee korantada ee elastomer-ka waxay ilaalin karaan 21 iyo 65%, siday u kala horreeyaan, 0% conductivities cadaadis cadaadis ah ilaa 100%, marka la barbar dhigo luminta dhamaystirka tamarta ee 5% cadaadiska monolayer graphene electrodes caadiga ah .Wadooyinka dheeraadka ah ee dhaqdhaqaaqa garaafyada iyo sidoo kale isdhexgalka daciifka ah ee ka dhexeeya lakabyada la wareejiyay ayaa gacan ka geysta xasiloonida tayada sare ee cadaadiska.Waxa aanu u isticmaalnay qaab-dhismeedkan graphene si aanu u abuurno kaarboon-kaarboon oo dhan transistors-ka.Ilaa hadda, kani waa transistor-ka ugu fidsan graphene ee leh hufnaanta ugu fiican iyada oo aan la isticmaalin bakhaar.In kasta oo daraasadda hadda la sameeyay si loogu suurtageliyo graphene loogu talagalay qalabka elektaroonigga ah ee la fidi karo, waxaan aaminsanahay in habkan lagu kordhin karo agabyada 2D kale si ay awood ugu yeeshaan fidsan 2D elektarooniga ah.
Garaafka CVD ee aagga weyn ayaa lagu beeray xayiraadda Cu foil (99.999%; Alfa Aesar) iyadoo cadaadis joogto ah 0.5 mtorr leh 50-SCCM (santimitir cubic caadiga ah daqiiqadii) CH4 iyo 20-SCCM H2 sida horudhacyada 1000 ° C.Labada dhinac ee xaashida Cu waxaa daboolay graphene monolayer.Lakabka khafiifka ah ee PMMA (2000 rpm; A4, Microchem) ayaa lagu dahaadhay hal dhinac oo ka mid ah xaashida Cu, taasoo samaysatay qaab PMMA/G/Cu foil/G ah.Ka dib, filimka oo dhan waxaa lagu qooyay 0.1 M ammonium persulfate [(NH4)2S2O8] xal ilaa 2 saacadood si meesha looga saaro foornada Cu.Inta lagu jiro hawshan, graphene-kii dhabarka ee aan la ilaalin ayaa markii hore jeexjeexay xudduudaha hadhuudhka ka dibna la duubay iyadoo ay ugu wacan tahay xiisadda dusha sare.Duubitaanka ayaa lagu dhejiyay filimka garaafka sare ee uu taageeray PMMA, iyaga oo samaynaya duub-duubyada PMMA/G/G.Aflaanta ayaa markii dambe lagu maydhay biyo fuuqsaday dhawr jeer waxaana la saaray substrate bartilmaameed, sida SiO2/Si adag ama substrate caag ah.Isla marka filimka ku lifaaqan uu ku qallajiyo substrate-ka, muunada w sida si isdaba joog ah loogu qooyay acetone, 1:1 acetone/IPA (alkolada isopropyl), iyo IPA 30 s midkiiba si looga saaro PMMA.Aflaanta waxaa lagu kululeeyay 100°C 15 daqiiqo ama waxaa lagu hayaa meel faaruq ah habeenkii si gabi ahaanba looga saaro biyaha ku xayiran ka hor inta aan lakabka kale ee G/G loo wareejin dusha.Talaabadani waxay ahayd in laga fogaado kala go'a filimka graphene ee ka soo baxa substrate-ka iyo in la hubiyo daboolida buuxda ee MGGs inta lagu jiro sii deynta lakabka side PMMA.
Qaab-dhismeedka qaab-dhismeedka MGG ayaa lagu arkay iyadoo la adeegsanayo mikroskoob indhaha ah (Leica) iyo mikroskoob elektaroonig ah (1 kV; FEI).Mikroskoobka xoogga atomiiga (Nanoscope III, Digital Instrument) ayaa lagu shaqeeyay qaab taabsi ah si loo ilaaliyo tafaasiisha buug-gacanta G.Daah-furnaanta filimka waxaa lagu tijaabiyay spectrometer-ka muuqda ee ultraviolet (Agilent Cary 6000i).Tijaabooyinka markii cidhiidhigu uu la socday jihada toosan ee socodka hadda, sawir-qaadista iyo balaasmaha O2 ayaa loo adeegsaday qaabaynta qaab-dhismeedka graphene ee xariijimaha (~ 300 μm ballaaran iyo ~ 2000 μm dheer), iyo Au (50 nm) electrodes ayaa si heer sare ah loo xareeyay iyadoo la isticmaalayo maaskaro hadh ah oo ku yaal labada daraf ee dhinaca dheer.Xariijimaha garaafka ayaa markaa la xiriiriyay elastomer SEBS (~ 2 cm ballaaran iyo ~ 5 cm dheer), oo leh dhidibka dheer ee xargaha oo barbar socda dhinaca gaaban ee SEBS oo ay ku xigto BOE (buffered oxide etch) (HF: H2O 1:6) etching iyo eutectic gallium indium (EGaIn) oo ah xiriiro koronto ah.Tijaabooyin is-barbar yaac ah, qaab-dhismeedka graphene ee aan qaabayn (~ 5 × 10 mm) ayaa lagu wareejiyay substrates SEBS, oo leh faashash dhaadheer oo barbar socda dhinaca dheer ee substrate-ka SEBS.Labada xaaladoodba, guud ahaan G (iyada oo aan G-duubyada)/SEBS ku fidsan yihiin dhinaca dheer ee elastomer-ka ee qalabka gacanta, iyo goobta, waxaan ku cabbirnay isbeddelkooda caabbinta ee cadaadiska saldhigga baaritaanka oo leh falanqeeye semiconductor (Keithley 4200) -SCS).
Dhammaan transistor-yaasha kaarboon-ku-salaysan ee aadka loo fidi karo oo hufan ayaa lagu sameeyay habraacyada soo socda si looga fogaado waxyeellada dareeraha dareeraha ah ee polymer dielectric iyo substrate.Qaab dhismeedka MGG ayaa loo wareejiyay SEBS sida korantada albaabka.Si loo helo lakabka dareeraha dhuuban ee polymer-ka ah (2 μm qaro weyn), xalka SEBS toluene (80 mg/ml) ayaa lagu dahaadhay octadecyltrichlorosilane (OTS) – substrate SiO2/Si oo la beddelay 1000 rpm 1 min.Filimka khafiifka ah ee khafiifka ah ayaa si fudud looga wareejin karaa dusha sare ee hydrophobic OTS oo la saaray substrate SEBS oo lagu daboolay graphene sida-loo diyaariyay.Capacitor waxaa la samayn karaa iyadoo la dhigayo dareere-bireed (EGaIn; Sigma-Aldrich) electrode sare si loo go'aamiyo awoodda sida shaqada cadaadis iyadoo la isticmaalayo LCR (inductance, capacitance, iska caabin) mitir (Agilent).Qaybta kale ee transistor-ku waxay ka koobnayd CNT-yada semiconducting-ka polymer-ka ah, iyadoo la raacayo habraacyadii hore loo sheegay (53).Ilaha qaabaysan/daadidka elektiroonigga ah waxaa lagu sameeyay substrates SiO2/Si adag.Ka dib, labada qaybood, dielectric/G/SEBS iyo CNTs/nashqada G/SiO2/Si, ayaa la isku dhejiyay, waxaana lagu qooyay BOE si looga saaro SiO2/Si substrate-ka adag.Sidaa darteed, transistor-yada si buuxda u hufan oo fidsan ayaa la sameeyay.Tijaabada korantada ee cidhiidhiga ayaa lagu sameeyay habaynta iskala bixinta gacanta sida habka aan soo sheegnay.
Waxyaabaha dheeriga ah ee maqaalkan ayaa laga heli karaa http://advances.sciencemag.org/cgi/content/full/3/9/e1700159/DC1
fig.S1.Sawirada mikroskoobyada indhaha ee monolayer MGG ee ku yaal substrate-yada SiO2/Si ee weynaynta kala duwan.
fig.S4.Isbarbardhigga caabbinta xaashida laba-baaritaannada ah iyo gudbinta @550 nm ee mono-, bi- iyo trilayer plain graphene (geesooyin madow), MGG (goobo cas), iyo CNTs (saddex xagal buluug).
fig.S7.Isbeddelka caabbinta caadiga ah ee mono- iyo bilayer MGGs (madow) iyo G (casaan) oo ka hooseeya ~ 1000 cadaadis wareeg ah oo raraya ilaa 40 iyo 90% culays is barbar socda, siday u kala horreeyaan.
fig.S10.Sawirka SEM ee trilayer MGG ee SEBS elastomer ka dib cadaadis, oo muujinaya iskudubbarid dheer oo ka gudubtay dhowr dildilaac.
fig.S12.Sawirka AFM ee trilayer MGG ee elastomer SEBS ee dhuuban ee 20% cadaadis ah, oo muujinaya in duubitaanku ka gudbay dillaac.
miiska S1.Dhaqdhaqaaqa bilayer MGG-hal- gidaar leh transistor-ka kaarboon nanotube ee dhererka kanaalka ka hor iyo ka dib cadaadiska.
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By Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
By Nan Liu, Alex Chortos, Ting Lei, Lihua Jin, Taeho Roy Kim, Won-Gyu Bae, Chenxin Zhu, Sihong Wang, Raphael Pfattner, Xiyuan Chen, Robert Sinclair, Zhenan Bao
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